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PolarHT TM
Power MOSFET
(Electrically Isolated Tab)
IXTP50N20PM
V DSS
I D25
R DS(on)
=
=
≤
200V
20A
60 m Ω
N-Chlnnel Enhancement Mode
OVERMOLDED TO-220
Symbol
V DSS
V DGR
V GSS
V GSM
Test Conditions
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C, R GS = 1M Ω
Continuous
Transient
Maximum Ratings
200
200
± 20
± 30
V
V
V
V
(I XTP...M ) OUTLINE
I D25
I DM
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
20
120
A
A
G
D
S
Isolated Tab
I A
E AS
dV/dt
P D
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 175 ° C
T C = 25 ° C
50
1
10
90
A
J
V/ns
W
G = Gate
S = Source
Features
D = Drain
T J
T JM
T stg
- 55 ... +175
175
- 55 ... +175
° C
° C
° C
? Isolated Package
? International Standard Package
T L
T SOLD
M d
Weight
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting torque
300
260
1.13/10
2.5
° C
° C
Nm/lb.in.
g
Application
? DC-DC Converters
? Battery Chargers
? Switched-Mode and Reasonant-Mode
Power Supplies
? DC Choppers
? AC Motor Control
? Uninterrupted Power Supplies
? High Speed Power Switching
Applications
Benefits
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
BV DSS V GS = 0V, I D = 250 μ A
Characteristic Values
Min. Typ. Max.
200 V
? Low Gate Charge Results in Simple
Drive Requirement
? Improved Gate, Avalanche and
V GS(th)
V DS = V GS , I D = 250 μ A
2.5
5.0
V
Dynamic dv/dt Ruggedness
? Low Drain Capacitance to Ground
I GSS
V GS = ± 20V, V DS = 0V
± 100 nA
? Fast Switching
I DSS
R DS(on)
V DS = V DSS
V GS = 0V
V GS = 10V, I D = 25A, Note 1
T J = 150 ° C
25 μ A
250 μ A
60 m Ω
? 2008 IXYS CORPORATION, All rights reserved
DS99564G(07/08)
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